Datasheet4U Logo Datasheet4U.com

FDU8880 - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters tm

Key Features

  • rDS(ON) = 10mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 13mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability D GDS I-PAK (TO-251AA) G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS.

📥 Download Datasheet

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDU8882 N-Channel MOSFET
FDU8870 N-Channel MOSFET
FDU8874 N-Channel MOSFET
FDU8876 N-Channel MOSFET
FDU8878 N-Channel MOSFET
FDU8896 N-Channel MOSFET
FDU8580 N-Channel MOSFET
FDU8586 N-Channel PowerTrench MOSFET
FDU8770 N-Channel MOSFET
FDU8778 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDU8880 May 2008 FDU8880 N-Channel PowerTrench® MOSFET 30V, 58A, 10mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters tm Features • rDS(ON) = 10mΩ, VGS = 10V, ID = 35A • rDS(ON) = 13mΩ, VGS = 4.