FDU8882 Datasheet | Fairchild Semiconductor

Features ! r DS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! r DS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low r DS(ON) ! Low gate charge ! High power and current handling capability - Ro HS plicant Application ! DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. S DTO-P-2A5K2 (TO-252) I-PAK (TO-251AA) ©2008 Fairchild Semiconductor Corporation FDD8882/FDU8882 Rev. 1.2 .fairchildsemi. FDD8882 / FDU8882 N-Channel Power Trench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 55 50 12.6 Figure 4 41 55 0.37 -55 to 175 Units V V A A A A m J W W/o C o C Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-252, TO-251 RθJA Thermal Resistance Junction to Ambient TO-252,...