FDW2504P
Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Key Features
- -3.8 A, -20 V, RDS(ON) = 0.043 Ω @ VGS = -4.5 V RDS(ON) = 0.070 Ω @ VGS = -2.5V
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
