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FDW2506P - Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 5.3 A,.
  • 20 V, RDS(ON) = 0.022 Ω @ VGS =.
  • 4.5 V. RDS(ON) = 0.033 Ω @ VGS =.
  • 2.5V.
  • Extended VGSS range (±12V) for battery.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET
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FDW2502PZ Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2503N Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2503NZ Dual N-Channel MOSFET
FDW2504P Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2507N Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDW2506P October 2000 FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V. RDS(ON) = 0.033 Ω @ VGS = –2.5V.