FDW2506P
Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Key Features
- -5.3 A, -20 V, RDS(ON) = 0.022 Ω @ VGS = -4.5 V. RDS(ON) = 0.033 Ω @ VGS = -2.5V.
- Extended VGSS range (±12V) for battery applications
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
