FDW256P
Description
This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).
Key Features
- -8 A, -30 V RDS(ON) = 13.5 mΩ @ V GS = -10 V RDS(ON) = 20 mΩ @ V GS = -4.5 V
- Extended V GSS range (±25V) for battery applications
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
