FDW258P Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V).
FDW258P Key Features
- 9 A, -12 V. RDS(ON) = 11 mΩ @ VGS = -4.5 V RDS(ON) = 14 mΩ @ VGS = -2.5 V RDS(ON) = 20 mΩ @ VGS = -1.8 V