FDZ7064N Datasheet | Fairchild Semiconductor

Description bining Fairchild’s 30V Power Trench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features - 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V RDS(ON) = 7.0 mΩ @ VGS = 10 V - Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 - Ultra-thin package: less than 0.80 mm height when mounted to PCB - 3.5 x 4 mm2 Footprint - High power and current handling capability. Applications - DC/DC converters - Solenoid drive Pin 1 D D D D D D S S S G D S S S S D S S S S D S S S S D D D D D F7064 Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±12 13.5 60 2.2 - 55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 °C/W Package Marking and Ordering Information Device Marking 7064N Device FDZ7064N Reel Size 13” Tape width 12mm Quantity 3000 2003 Fairchild Semiconductor...