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FDZ7064N - 30V N-Channel Logic Level PowerTrench BGA MOSFET

General Description

Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON).

Key Features

  • 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V RDS(ON) = 7.0 mΩ @ VGS = 10 V.
  • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8.
  • Ultra-thin package: less than 0.80 mm height when mounted to PCB.
  • 3.5 x 4 mm2 Footprint.
  • High power and current handling capability.

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Full PDF Text Transcription for FDZ7064N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDZ7064N. For precise diagrams, and layout, please refer to the original PDF.

FDZ7064N January 2003 FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Combining Fairchild’s 30V PowerTrench process with state of the art B...

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Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 13.5 A, 30 V. RDS(ON) = 8.0 mΩ @ VGS = 4.5 V RDS(ON)

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