FDZ7064S Datasheet | Fairchild Semiconductor

Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. bining Fairchild’s 30V Power Trench Sync FET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA Sync FET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON). Features - 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V RDS(ON) = 9 mΩ @ VGS = 4.5 V - Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 - Ultra-thin package: less than 0.8 mm height when mounted to PCB - 3.5 x 4 mm2 Footprint - High power and current handling capability. Applications - DC/DC converters D S S S S D S S S S D S S S S D D D D D Pin 1 F7064S Pin 1 Bottom Top TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±16 13.5 60 2.2 - 55 to +150 Units V V A W °C Thermal Characteristics R ¡£¢ ¤ R ¡£¢ - R ¡£¢ ¦ Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case...