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FDZ7064S - 30V N-Channel PowerTrench SyncFET BGA MOSFET

General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON).

Key Features

  • 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V RDS(ON) = 9 mΩ @ VGS = 4.5 V.
  • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8.
  • Ultra-thin package: less than 0.8 mm height when mounted to PCB.
  • 3.5 x 4 mm2 Footprint.
  • High power and current handling capability. D.

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Full PDF Text Transcription for FDZ7064S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDZ7064S. For precise diagrams, and layout, please refer to the original PDF.

FDZ7064S May 2004 FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky dio...

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OSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON). Features • 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V RDS(ON) = 9 mΩ @ VGS = 4.5

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