Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON).
Key Features
11 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V.
Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. Ultra-thin package: less than 0.80 mm height when mounted to PCB. High performance trench technology for extremely low RDS(ON) Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling.
Full PDF Text Transcription for FDZ7296 (Reference)
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FDZ7296. For precise diagrams, and layout, please refer to the original PDF.
FDZ7296 November 2004 FDZ7296 30V N-Channel PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packa...
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irchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA www.DataSheet4U.com MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features 11 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • • • • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. Ultra-thin package: less than 0.80 mm height when mounted to PCB.
FDZ7296 Datasheet
