FDZ7296 Datasheet | Fairchild Semiconductor

Description bining Fairchild’s advanced Power Trench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA .. MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features 11 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V - - - - Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. Ultra-thin package: less than 0.80 mm height when mounted to PCB. High performance trench technology for extremely low RDS(ON) Optimized for low Qg and Qgd to enable fast switching and reduce Cd V/dt gate coupling Applications - High-side Mosfet in DC-DC converters for Server and Notebook applications D S S S D S S S S D D Pin 1 Pin 1 Top Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±20 11 20 2.1 - 55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 60 6.3 0.6 °C/W Package Marking and Ordering Information Device Marking 7296 Device FDZ7296 Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2004 Fairchild Semiconductor Corporation FDZ7296 Rev B (W) Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise...