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FGA30N65SMD 650 V, 30 A Field Stop IGBT
July 2013
FGA30N65SMD
650 V, 30 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175 C • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A • Fast Switching • Tighten Parameter Distribution • RoHS Compliant
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General Description
Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.