FGA30T65SHD Datasheet | Fairchild Semiconductor

FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT 650 V, 30 A Field Stop Trench IGBT December 2014 Features - Maximum Junction Temperature : TJ =175oC - Positive Temperature Co-efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A - 100% of the Parts Tested for ILM(1) - High Input Impedance - Fast Switching - Tighten Parameter Distribution - RoHS pliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses...