FGA50N100BNT Overview
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance. GCE TO-3P Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current...
FGA50N100BNT Key Features
- High Speed Switching
- Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
- High Input Impedance
- RoHS pliant