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FGA50N100BNT - 50A NPT-Trench IGBT CO-PAK

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness.

These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A.
  • High Input Impedance.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • RoHS Compliant Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance.