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FGA50N100BNT - 50A NPT-Trench IGBT CO-PAK

Description

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness.

These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance.

Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A.
  • High Input Impedance.
  • RoHS Compliant.

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Datasheet Details

Part number FGA50N100BNT
Manufacturer Fairchild Semiconductor
File Size 690.84 KB
Description 50A NPT-Trench IGBT CO-PAK
Datasheet download datasheet FGA50N100BNT Datasheet
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FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A • High Input Impedance • RoHS Compliant Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance. General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance.
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