FGA50N100BNTD - IGBT

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

High Speed Switching.
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A.
High Input Impedance.
Built-in Fast Recovery Diode.

Fairchild Semiconductor

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Datasheet Details

Part number	FGA50N100BNTD
Manufacturer	Fairchild Semiconductor
File Size	246.69 KB
Description	IGBT
Datasheet	FGA50N100BNTD Datasheet
Additional preview pages of the FGA50N100BNTD datasheet.

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Full PDF Text Transcription

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FGA50N100BNTD — 1000 V NPT Trench IGBT November 2013 FGA50N100BNTD 1000 V NPT Trench IGBT General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.

Published: Jan 16, 2017 |