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FGA50N100BNTD2 - IGBT

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A.
  • High Input Impedance.
  • Built-in Fast Recovery Diode.
  • RoHS Compliant.

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Datasheet Details

Part number FGA50N100BNTD2
Manufacturer Fairchild Semiconductor
File Size 347.79 KB
Description IGBT
Datasheet download datasheet FGA50N100BNTD2 Datasheet
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FGA50N100BNTD2 — 1000 V NPT Trench IGBT FGA50N100BNTD2 1000 V NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode • RoHS Compliant Applications • UPS, Welder November 2013 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
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