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FGA50N100BNTD2 Datasheet

Manufacturer: Fairchild (now onsemi)
FGA50N100BNTD2 datasheet preview

Datasheet Details

Part number FGA50N100BNTD2
Datasheet FGA50N100BNTD2-FairchildSemiconductor.pdf
File Size 347.79 KB
Manufacturer Fairchild (now onsemi)
Description IGBT
FGA50N100BNTD2 page 2 FGA50N100BNTD2 page 3

FGA50N100BNTD2 Overview

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. C GCE TO-3P Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage...

FGA50N100BNTD2 Key Features

  • High Speed Switching
  • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
  • High Input Impedance
  • Built-in Fast Recovery Diode
  • RoHS pliant
Fairchild (now onsemi) logo - Manufacturer

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