FGH50N3 Overview
Key Specifications
Package: TO-247
Mount Type: Through Hole
Pins: 3
Height: 20.82 mm
Description
The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- Low VCE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max
- Low EOFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ
- SCWT (@ TJ = 125°C). . . . . . . . . . . . . . . . . > 8µs
- 300V Switching SOA Capability
