FGH50N3
FGH50N3 is N-Channel IGBT manufactured by Fairchild Semiconductor.
July 2002
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Formerly Developmental Type TA49485
Features
- Low VCE(SAT)
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