FGH50N3 Description
Using ON Semiconductor’s planar technology, this IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies.
FGH50N3 Key Features
- Low Saturation Voltage: VCE(sat) = 1.4 V Max
- Low EOFF = 6.6 uJ/A
- SCWT = 8 ms @ = 125°C
- 300 V Switching SOA Capability
- Positive Temperature Coefficient above 50 A
- This is a Pb-Free Device