FQI10N60C Datasheet PDF - Fairchild Semiconductor 600V N-Channel MOSFET Specs

FQI10N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current.

Datasheet Details

Part number	FQI10N60C
Manufacturer	Fairchild Semiconductor
File Size	614.17 KB
Description	600V N-Channel MOSFET
Datasheet	FQI10N60C Datasheet
Additional preview pages of the FQI10N60C datasheet.

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Full PDF Text Transcription

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FQB10N60C / FQI10N60C QFET FQB10N60C / FQI10N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 9.5A, 600V, RDS(on) = 0.

Published: Apr 1, 2005 |