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FQI20N06 - 60V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

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Datasheet Details

Part number FQI20N06
Manufacturer Fairchild Semiconductor
File Size 669.82 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FQI20N06 Datasheet
Additional preview pages of the FQI20N06 datasheet.

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Full PDF Text Transcription

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FQB20N06 / FQI20N06 May 2001 QFET FQB20N06 / FQI20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D TM Features • • • • • • • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 11.
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