FQI20N06L Datasheet | Fairchild Semiconductor

FQB20N06L / FQI20N06L May 2001 QFET FQB20N06L / FQI20N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D Features - - - - - - - 21A, 60V, RDS(on) = 0.055Ω @VGS...