FQI20N06L Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/...
FQI20N06L Key Features
- 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% a