FQI24N08 Datasheet PDF - Fairchild Semiconductor 80V N-Channel MOSFET Specs

FQI24N08 - 80V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (T.

Datasheet Details

Part number	FQI24N08
Manufacturer	Fairchild Semiconductor
File Size	719.74 KB
Description	80V N-Channel MOSFET
Datasheet	FQI24N08 Datasheet
Additional preview pages of the FQI24N08 datasheet.

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Full PDF Text Transcription

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FQB24N08 / FQI24N08 August 2000 QFET FQB24N08 / FQI24N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features • • • • • • • 24A, 80V, RDS(on) = 0.

Published: Apr 1, 2005 |