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FQI24N08 Datasheet 80v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB24N08 / FQI24N08 August 2000 QFET FQB24N08 / FQI24N08 80V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

Key Features

  • 24A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (T.

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FQI22P10 100V P-Channel MOSFET
FQI27N25 250V N-Channel MOSFET
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FQI27P06 60V P-Channel MOSFET
FQI28N15 150V N-Channel MOSFET
FQI2N30 300V N-Channel MOSFET
FQI2N50 500V N-Channel MOSFET
FQI2N60 600V N-Channel MOSFET

FQI24N08 Distributor