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FQI85N06 Datasheet 60v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB85N06 / FQI85N06 May 2001 QFET FQB85N06 / FQI85N06 60V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Key Features

  • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typically 86 nC) Low Crss ( typically 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continu.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQI8N25 250V N-Channel MOSFET
FQI8N60C 600V N-Channel MOSFET
FQI8P10 100V P-Channel MOSFET
FQI10N20 200V N-Channel MOSFET
FQI10N20C 200V N-Channel MOSFET
FQI10N20L 200V LOGIC N-Channel MOSFET
FQI10N60C 600V N-Channel MOSFET
FQI11N40 400V N-Channel MOSFET
FQI11N40C 400V N-Channel MOSFET
FQI11P06 60V P-Channel MOSFET

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