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FQI8N25 Datasheet 250v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQB8N25 / FQI8N25 May 2000 QFET FQB8N25 / FQI8N25 250V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.

Key Features

  • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQI8N60C 600V N-Channel MOSFET
FQI85N06 60V N-Channel MOSFET
FQI8P10 100V P-Channel MOSFET
FQI10N20 200V N-Channel MOSFET
FQI10N20C 200V N-Channel MOSFET
FQI10N20L 200V LOGIC N-Channel MOSFET
FQI10N60C 600V N-Channel MOSFET
FQI11N40 400V N-Channel MOSFET
FQI11N40C 400V N-Channel MOSFET
FQI11P06 60V P-Channel MOSFET

FQI8N25 Distributor