FQI8P10 Datasheet PDF - Fairchild Semiconductor 100V P-Channel MOSFET Specs

FQI8P10 - 100V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

-8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK FQB Series G D S I2-PAK FQI Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C).

Datasheet Details

Part number	FQI8P10
Manufacturer	Fairchild Semiconductor
File Size	667.17 KB
Description	100V P-Channel MOSFET
Datasheet	FQI8P10 Datasheet
Additional preview pages of the FQI8P10 datasheet.

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Full PDF Text Transcription

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FQB8P10 / FQI8P10 QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • • -8.0A, -100V, RDS(on) = 0.

Published: Apr 1, 2005 |