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FQP3P20 - 200V P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -2.8 A, -200 V, RDS(on) = 2.7 Ω (Max. ) @ VGS = -10 V, ID = -1.4 A.
  • Low Gate Charge (Typ. 6 nC).
  • Low Crss (Typ 7.5 pF).
  • 100% Avalanche Tested S GDS TO-220 G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalan.

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Datasheet Details

Part number FQP3P20
Manufacturer Fairchild Semiconductor
File Size 975.57 KB
Description 200V P-Channel MOSFET
Datasheet download datasheet FQP3P20 Datasheet
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Full PDF Text Transcription

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FQP3P20 — P-Channel QFET® MOSFET FQP3P20 P-Channel QFET® MOSFET -200 V, -2.8 A, 2.7 Ω November 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -2.8 A, -200 V, RDS(on) = 2.7 Ω (Max.) @ VGS = -10 V, ID = -1.4 A • Low Gate Charge (Typ. 6 nC) • Low Crss (Typ 7.5 pF) • 100% Avalanche Tested S GDS TO-220 G D Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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