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FQU20N06L Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQU20N06L — N-Channel QFET® MOSFET FQU20N06L N-Channel QFET® MOSFET 60 V, 17.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

  • 17.2 A, 60 V, RDS(on) = 42 mΩ (Max. ) @ VGS = 10 V, ID = 8.6 A.
  • Low Gate Charge (Typ. 9.5 nC).
  • Low Crss (Typ. 35 pF).
  • 100% Avalanche Tested.
  • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers D GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continu.

More Datasheets from Fairchild (now onsemi)

Part Number Description
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FQU20N06 60V N-Channel MOSFET
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FQU2N40 400V N-Channel MOSFET
FQU2N50 500V N-Channel MOSFET
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FQU2N60 600V N-Channel MOSFET
FQU2N60C 600V N-Channel MOSFET

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