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FQU20N06L - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 17.2 A, 60 V, RDS(on) = 42 mΩ (Max. ) @ VGS = 10 V, ID = 8.6 A.
  • Low Gate Charge (Typ. 9.5 nC).
  • Low Crss (Typ. 35 pF).
  • 100% Avalanche Tested.
  • Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers D GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continu.

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Datasheet Details

Part number FQU20N06L
Manufacturer Fairchild Semiconductor
File Size 962.06 KB
Description N-Channel MOSFET
Datasheet download datasheet FQU20N06L Datasheet
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Full PDF Text Transcription

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FQU20N06L — N-Channel QFET® MOSFET FQU20N06L N-Channel QFET® MOSFET 60 V, 17.2 A, 42 mΩ December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 17.2 A, 60 V, RDS(on) = 42 mΩ (Max.) @ VGS = 10 V, ID = 8.6 A • Low Gate Charge (Typ. 9.5 nC) • Low Crss (Typ.
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