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FQU20N06LE Datasheet 60v Logic N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD20N06LE / FQU20N06LE May 2001 QFET FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Key Features

  • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers.
  • Built-in ESD Protection Diode D D G G S D-PAK FQD Series I-PAK G D S FQU Series S Absolute Maximum Ratings Symbol VDSS ID.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQU20N06L N-Channel MOSFET
FQU20N06 60V N-Channel MOSFET
FQU24N08 80V N-Channel MOSFET
FQU2N100 1000V N-Channel MOSFET
FQU2N30 300V N-Channel MOSFET
FQU2N40 400V N-Channel MOSFET
FQU2N50 500V N-Channel MOSFET
FQU2N50B 500V N-Channel MOSFET
FQU2N60 600V N-Channel MOSFET
FQU2N60C 600V N-Channel MOSFET

FQU20N06LE Distributor