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FQU24N08 - 80V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dr.

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Datasheet Details

Part number FQU24N08
Manufacturer Fairchild Semiconductor
File Size 707.61 KB
Description 80V N-Channel MOSFET
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FQD24N08 / FQU24N08 August 2000 QFET FQD24N08 / FQU24N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • 19.6A, 80V, RDS(on) = 0.
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