H11A817C Description
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. H11A617 & H11A817 SCHEMATIC ANODE 1 4 COLLECTOR.
H11A817C Key Features
- pact 4-pin package
- Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600%