• Part: H11A817B
  • Manufacturer: QT Optoelectronics
  • Size: 30.01 KB
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H11A817B Description

The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. 1 2 .187 (4.75) .175 (4.45).