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H11A817 - 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

General Description

The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.

Key Features

  • 0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .022 (.56) .015 (.40) .100 (2.54) TYP.

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Datasheet Details

Part number H11A817
Manufacturer QT Optoelectronics
File Size 30.01 KB
Description 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
Datasheet download datasheet H11A817 Datasheet

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Other Datasheets by QT Optoelectronics

Part Number Description
H11A817A 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A817B 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A817C 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A817D 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11A1 PHOTOTRANSISTOR OPTOCOUPLERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. 1 2 .187 (4.75) .175 (4.45) FEATURES 0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.