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H11A817B - 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

Description

The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.

Features

  • Compact 4-pin package.
  • Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320%.
  • Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% 300-600%.

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📁 Similar Datasheet

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H11A817B 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS QT Optoelectronics
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H11A817A 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS QT Optoelectronics
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Other Datasheets by Fairchild (onsemi)

Part Number Description
H11A817 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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Full PDF Text Transcription

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4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
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