| Part Number | H11A817B Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The H11A617 and .
* Compact 4-pin package * Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: H11AA814A: 50-150% H11A817A: H11A617A: 40%-80% H11A817B: H11A617B: 63%-125% H11A817C: H11A617C: 100%-200% H11A817D: H11A617D: 160%-320% * Minimum BVCEO of 70V guaranteed 50-600% 80-160% 130-260% 200-400% . |
H11A817B Datasheet and Specifications PDF
The H11A817B is a 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS.
| Part Number | H11A817B Datasheet |
|---|---|
| Description | 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| Manufacturer | QT Optoelectronics |
| Overview | The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line packag. 0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .022 (.56) . |