IRFM110A Overview
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) IRFM110A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 1.5 A 2 1 3 1. Gate 2. Drain 3. Source