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IRLW510A - ADVANCED POWER MOSFET

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Fairchild Semiconductor

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IRLW510A ADVANCED POWER MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRLW510A

Datasheet Details

Part number	IRLW510A
Manufacturer	Fairchild Semiconductor
File Size	268.75 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRLW510A Datasheet
Additional preview pages of the IRLW510A datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
Lower RDS(ON): 0.336Ω (Typ. ) IRLW/I510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Char.

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Published: Apr 16, 2005 |