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IRLW610A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7.

Download the IRLW610A datasheet PDF. This datasheet also includes the IRLI610A variant, as both parts are published together in a single manufacturer document.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 150° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
  • Lower RDS(ON): 1.185Ω (Typ. ) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Chara.