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IRLW610A - Advanced Power MOSFET

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Fairchild Semiconductor

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IRLW610A Advanced Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRLW610A

Datasheet Details

Part number	IRLW610A
Manufacturer	Fairchild Semiconductor
File Size	263.36 KB
Description	Advanced Power MOSFET
Datasheet	IRLW610A Datasheet
Note	This datasheet PDF includes multiple part numbers: IRLW610A, IRLI610A. Please refer to the document for exact specifications by model.
Additional preview pages of the IRLW610A datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 1.185Ω (Typ. ) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Chara.

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Published: Jan 24, 2007 |