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IRLW530A - HEXFET Power MOSFET

This page provides the datasheet information for the IRLW530A, a member of the IRLI530A HEXFET Power MOSFET family.

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175° C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
  • Lower RDS(ON): 0. 101Ω (Typ. ) IRLW/I530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www. DataSheet.

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Full PDF Text Transcription

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (Typ.) IRLW/I530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR www.DataSheet4U.
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