IRLW640A - Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRLW640A
Manufacturer	Fairchild Semiconductor
File Size	225.33 KB
Description	Power MOSFET
Datasheet	IRLW640A Datasheet
Additional preview pages of the IRLW640A datasheet.

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
150°C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON): 0.145Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curre.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 4, 2016 |