IRLW640A Description
$GYDQFHG 3RZHU 026)(7 IRLW/I640A.
IRLW640A Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- 150°C Operating Temperature
- Lower Leakage Current: 10µA (Max.) @ VDS = 200V
- Lower RDS(ON): 0.145Ω (Typ.)