ISL9N2357D3ST Overview
ISL9N2357D3ST Data Sheet June 2002 30V, 0.007 Ohm, 35A, N-Channel UltraFET® Trench Power MOSFET UltraFET® Trench from Fairchild is a new advanced MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching and low gate charge. The reduced conduction and switching losses extend battery life in notebook PCs, cellular telephones and other portable information...
ISL9N2357D3ST Key Features
- rDS(ON) = 0.006Ω Typical, VGS = 10V
- Qg Total 85nC Typical, VGS = 10V
- Qgd 16nC Typical
- CISS 5600pF Typical