ISL9N2357D3ST Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 0.006Ω Typical, VGS = 10V - Qg Total 85n C Typical, VGS = 10V - Qgd 16n C Typical - CISS 5600p F Typical Packaging ISL9N2357D3ST JEDEC TO-252AA DRAIN (FLANGE) Symbol GATE SOURCE Ordering Information PART NUMBER ISL9N2357D3ST PACKAGE TO-252AA BRAND N2357D NOTE: When ordering, use the entire part number. e.g., ISL9N2357D3ST. Absolute Maximum Ratings SYMBOL VDSS VDGR VGS ID ID IDM PD TJ, TSTG TL Tpkg RθJC RθJA NOTE: 1. TJ = 25o C to 150o C. TC = 25o C, Unless Otherwise Specified PARAMETER ISL9N2357D3ST 30 30 ±20 35 35 Figure 4 100 0.67 -55 to 175 300 260 UNITS V V V A A A W W/o C o C o C o C Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20kΩ) (Note 1) Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Figure 2) Continuous (TC = 100o C, VGS = 10V) Pulsed Drain Current Power Dissipation Derate Above 25o C Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 THERMAL SPECIFICATIONS Thermal Resistance Junction to Case, TO-252 Thermal Resistance Junction to Ambient TO-252 1.5 100 o C/W o C/W CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9N2357D3ST Rev. B1 Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 9) VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TC = 150o C Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source ON Resistance VGS(TH) r DS(ON) VGS = VDS, ID = 250µA (Figure 8) ID = 35A, VGS = 10V (Figure 7) 2 0.006 4 0.007 V Ω IGSS VGS = ±20V 30 1 250 ±100 V...