ISL9N306AD3ST Datasheet | Fairchild Semiconductor

cription This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - r DS(ON) = 0.0052Ω (Typ), V GS = 10V - r DS(ON) = 0.0085Ω (Typ), V GS = 4.5V - Qg (Typ) = 30n C, VGS = 5V - Qgd (Typ) = 11n C - CISS (Typ) = 3400p F SOURCE DRAIN DRAIN (FLANGE) GATE G S Applications - DC/DC converters DRAIN (FLANGE) GATE SOURCE TO-252 TO-251 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = V, Rθ JC = 52o C/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature 50 50 16 Figure 4 125 0.83 -55 to 175 A A A A W W/o C o Ratings 30 ±20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 1.2 100 52 o o o C/W C/W C/W Package Marking and Ordering Information Device Marking N306AD N306AD Device ISL9N306AD3ST ISL9N306AD3 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units ©2003 Fairchild Semiconductor Corporation ISL9N306AD3 / ISL9N306AD3ST Rev. B2 ISL9N306AD3 / ISL9N306AD3ST Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max...