ISL9N306AS3ST Datasheet | Fairchild Semiconductor

escription This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - r DS(ON) = 0.0052Ω (Typ), VGS = 10V - r DS(ON) = 0.0085Ω (Typ), VGS = 4.5V - Qg (Typ) = 30n C, VGS = 5V - Qgd (Typ) = 11n C - CISS (Typ) = 3400p F Applications - DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE G SOURCE DRAIN (FLANGE) S TO-263AB Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) TO-220AB Ratings 30 ±20 75 61 18 Figure 4 125 0.83 -55 to 175 Units V V A A A A W W/o C o MOSFET Maximum Ratings TA = 25°C unless otherwise noted Continuous (TC = 25o C, VGS = V, RθJC = 43o C/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.2 62 43 o C/W C/W o C/W o Package Marking and Ordering Information Device Marking N306AS N306AP Device ISL9N306AS3ST ISL9N306AP3 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units ©2002 Fairchild Semiconductor Corporation Rev. B, February 2002 ISL9N306AP3/ISL9N306AS3ST Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max...