ISL9N308AD3ST Datasheet | Fairchild Semiconductor

ISL9N308AD3 / ISL9N308AD3ST June 2002 PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET® Trench Power MOSFETs 30V, 50A, 8mΩ General Description This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - rDS(ON) = 0.0064Ω (Typ), VGS = 10V - rDS(ON) = 0.010Ω (Typ), VGS = 4.5V - Qg (Typ) = 24nC, VGS = 5V - Qgd (Typ) = 8nC - CISS (Typ) = 2600pF Applications - DC/DC converters D-PAK TO-252 (TO-252) I-PAK...