ISL9N308AP3 Datasheet | Fairchild Semiconductor

ISL9N308AP3/ISL9N308AS3ST January 2002 PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET® Trench MOSFETs 30V, 75A, 8mΩ General Description This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features - Fast switching - rDS(ON) = 0.0064Ω (Typ), VGS = 10V - rDS(ON) = 0.010Ω (Typ), VGS = 4.5V - Qg (Typ) = 24nC, VGS = 5V - Qgd (Typ) = 8nC - CISS (Typ) = 2600pF Applications - DC/DC converters DRAIN (FLANGE) SOURCE DRAIN GATE D GATE...