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KST4401
KST4401
Switching Transistor
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Value 60 40 6 600 350 150 Units V V V mA mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO IBEV ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current * DC Current Gain Test Condition IC=100µA, IE=0 IC=1.0mA, IB=0 IE=100µA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V VCE=1V, IC=0.
KST4401 Datasheet
