KST4401 Datasheet | Fairchild Semiconductor

Switching Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Value 60 40 6 600 350 150 Units V V V m A m W °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO IBEV ICEX h FE Parameter Collector-Base Breakdown Voltage - Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current - DC Current Gain Test Condition IC=100µA, IE=0 IC=1.0m A, IB=0 IE=100µA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V VCE=1V, IC=0.1m A VCE=1V, IC=1m A VCE=1V, IC=10m A VCE=1V, IC=150m A VCE=2V, IC=500m A IC=150m A, IB=15m A IC=500m A, IB=50m A IC=150m A, IB=15m A IC=500m A, IB=50m A IC=20m A, VCE=10V f=100MHz VCB=5V, IE=0, f=100KHz VCC=30V, VBE=2V IC=150m A, IB1=15m A VCC=30V, IC=150m A IB1=IB2=15m A 0.75 250 6.5 35 255 20 40 80 100 40 Min. 60 40 6 100 100 Max. Units V V V n A n A 300 0.4 0.75 0.95 1.2 V V V V MHz p F ns ns VCE (sat) VBE (sat) f T Cob t ON t OFF - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time - Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 2X ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB h FE, DC CURRENT GAIN VCE = 1V VBE(sat) VCE (sat) 10 1 10 100 1000 0.01 1 10 100 1000 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Ccb [p F],...