KST4403 Datasheet | Fairchild Semiconductor

Switching Transistor 2 1 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 1. Base 2. Emitter 3. Collector Value -40 -40 -5 -600 350 150 Units V V V m A m W °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO IBEV ICEX h FE Parameter Collector-Base Breakdown Voltage - Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base Cut-off Current Collector Cut-off Current DC Current Gain Test Condition IC= -0.1m A, IE=0 IC= -1.0m A, IB=0 IE= -0.1m A, IC=0 VCE= -35V, VBE= -0.4V VCE= -35V, VBE= -0.4V VCE= -1V, IC= -0.1m A VCE= -1V, IC= -1.0m A VCE= -1V, IC= -10m A - VCE= -2V, IC= -150m A - VCE= -2V, IC= -500m A IC= -150m A, IB= -15m A IC= -500m A, IB= -50m A IC= -150m A, IB= -15m A IC= -500m A, IB= -50m A IC= -20m A, VCE= -10V f=100MHz VCB= -10V, IE=0 f=140KHz VCC= -30V, VBE= -2V IC= -150m A, IB1= -15m A VCC= -30V, IC= -150m A IB1=IB2= -15m A Marking -0.75 200 8.5 35 255 30 60 100 100 20 Min. -40 -40 -5 -0.1 -0.1 Max. Units V V V µA µA 300 -0.4 -0.75 -0.95 -1.3 V V V V MHz p F ns ns VCE (sat) VBE (sat) f T Cob t ON t OFF - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time - Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 2T ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC = 10 IB h FE, DC CURRENT GAIN VCE = -2V -1 V BE(sat) -0.1 V CE(sat) 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[m A], COLLECTOR CURRENT IC[m A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation...