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MTP3055VL - N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e.

power supplies and power motor controls.

Key Features

  • faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features.
  • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.
  • Rugged internal source-drain diode can eliminate the need for an ext.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical DC electrical parameters specified at elevated temperature. • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V.