Datasheet4U Logo Datasheet4U.com

MTP3055VL - N-Channel MOSFET

General Description

specifically for low voltage, high speed switching applications i.e.

power supplies and power motor controls.

Key Features

  • faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features.
  • 12 A, 60 V. RDS(ON) = 18 W @ VGS = 5 V.
  • Critical DC Electrical Parameters Specified at Elevated Temperature.
  • Low Drive Requirements Allowing Operation Directly from Logic Drivers. Vgs(th) < 2 V.
  • Rugged Internal Source-Drain Diode Can Eliminate the Need for an External.

📥 Download Datasheet

Datasheet Details

Part number MTP3055VL
Manufacturer onsemi
File Size 264.77 KB
Description N-Channel MOSFET
Datasheet download datasheet MTP3055VL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor
MTP3055V N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
MTP3055 TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM Motorola
MTP3055 N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET ST Microelectronics
MTP3055A N-Channel MOSFET STMicroelectronics

Other Datasheets by onsemi

Part Number Description
MTP3055V Power MOSFET
MTP30P06V Power MOSFET 30 Amps
MTP33N10E Power MOSFET
MTP36N06V Power MOSFET
MTP3N50E TMOS E-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – N-Channel, Field Effect Transistor, Enhancement Mode, Logic Level 60 V, 12 A, 0.18 W VDSS 60 V RDS(ON) MAX 0.18 W @ 5 V D ID MAX 12 A MTP3055VL G General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 18 W @ VGS = 5 V • Critical DC Electrical Parameters Specified at Elevated Temperature • Low Drive Requirements Allowing Operation Directly from Logic Drivers.