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MTP3055V - Power MOSFET

Key Features

  • 0 VDD = 30 V ID = 12 A 50 VGS = 10 V TJ = 25°C 40 100 6 30 4 20 2 Q3 ID = 12 A TJ = 25°C 10 VDS 00 0 1 2 3 4 5 6 7 8 9 10 11 12 13 QT, TOTAL CHARGE (nC) Figure 8. Gate.
  • To.
  • Source and Drain.
  • To.
  • Source Voltage versus Total Charge tr td(off) 10 tf td(on) 1 1 10 RG, GATE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.