| Part Number | MTP3055V Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MTP3055V
Preferred Device
Power MOSFET 12 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high .
* Continuous @ 25°C Drain Current * Continuous @ 100°C Drain Current * Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 60 60 ± 20 ± 25 12 7.3 37 48 0.32 Operating and Storage Temperature Range TJ, Tstg *55 to 175 Single Pulse Drain *to *. |
MTP3055V Datasheet and Specifications PDF
The MTP3055V is a Power MOSFET.
| Part Number | MTP3055V Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower g. 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. ' * ' 6 72 * $EVRO. |