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MTP3055V - N-Channel Enhancement Mode Field Effect Transistor

General Description

This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e.

power supplies and power motor controls.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • • 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. '.
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTP3055V May 1999 MTP3055V N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating.