MTP3055V
Description
This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.
Key Features
- RDS(ON) = 0.150 Ω @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- 175°C maximum junction temperature rating
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