MTP3055V - N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Fairchild Semiconductor

Part number	MTP3055V
Manufacturer	Fairchild Semiconductor
File Size	251.89 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	MTP3055V Datasheet
Additional preview pages of the MTP3055V datasheet.

This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e.

power supplies and power motor controls.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

12 A, 60 V. RDS(ON) = 0.150 Ω @ VGS = 10 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. '.
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MTP3055V - Power MOSFET (ON Semiconductor)
MTP3055VL - N-Channel MOSFET (ON Semiconductor)
MTP3055 - TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM (Motorola)
MTP3055 - N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET (ST Microelectronics)
MTP3055A - N-Channel MOSFET (STMicroelectronics)
MTP3055AFI - N-Channel MOSFET (STMicroelectronics)
MTP3055E - N-CHANNEL MOSFET (ST Microelectronics)
MTP30008 - Three-Phase Bridge Rectifier (nELL)
MTP30010 - Three-Phase Bridge Rectifier (nELL)
MTP30012 - Three-Phase Bridge Rectifier (nELL)

Other Datasheets by Fairchild Semiconductor

Published: May 25, 2005 |