Fairchild Semiconductor S9012
PNP Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 1 TO-92 1. Emitter 2. Base 3. Collector Ratings -40 -20 -5 -500 625 150 -55 ~ 150 Units V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = -100µA, IE =0 IC = -1mA, IB =0 IE = -100µA, IC =0 VCB = -25V, IE =0 VEB = -3V, IC =0 VCE = -1V, IC = -50mA VCE = -1V, IC = -500mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -1V, IC = -10mA Min. -40 -20 -5 64 40 -0.6 Typ.